 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SGD04N60 Preliminary data IGBT * Low forward voltage drop * High switching speed * Low tail current * Latch-up free * Avalanche rated Pin 1 Pin 2 Pin 3 G Type C Ordering Code E VCE 600V IC 4A Package SGD04N60 Maximum Ratings Parameter P-TO252 Q67040-A . . . . Symbol Values Unit Collector-emitter voltage Collector-gate voltage RGE = 20 k V CE V CGR 600 V 600 V GE IC Gate-emitter voltage DC collector current TC = 25 C TC = 100 C 20 A 10 4 Pulsed collector current, tp = 1 ms TC = 25 C TC = 100 C ICpuls 20 8 E AS Avalanche energy, single pulse IC = 4 A, VCC = 50 V, RGE = 25 L = 500 H, Tj = 25 C mJ 4 P tot Power dissipation TC = 25 C W 50 Semiconductor Group 1 Apr-07-1998 SGD04N60 Preliminary data Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Storage temperature IEC climatic category, DIN IEC 68-1 Thermal Characteristics Parameter Tj Tstg -55 ... + 150 -55 ... + 150 55 / 150 / 56 C - - Symbol min. Values typ. max. Unit Thermal resistance , junction - case Thermal resistance, junction - ambient ( PCB mount)** RthJC RthJA - 50 2.5 - K/W ** Device on 50mm x 50 mm x 1.5 mm epoxy PCB ( FR-4 ) with 6 cm2 copper area around the heat slug footprint ( one layer, 70 m copper ). PCB is vertical without blown air. Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Collector-emitter breakdown voltage V GE = 0 V, IC = 0.5 mA, Tj = -55 C V (BR)CES V 600 - Gate threshold voltage V GE = VCE, IC = 0.2 mA, Tj = 25 C V GE = VCE, IC = 0.2 mA, Tj = 150 C V GE(th) 3 2 V CE(sat) 4 3 5 - Collector-emitter saturation voltage V GE = 15 V, IC = 4 A, Tj = 25 C V GE = 15 V, IC = 4 A, Tj = 150 C 1.6 ICES 2 2.3 2.5 2.8 A Zero gate voltage collector current V CE = 600 V, V GE = 0 V, Tj = 25 C V CE = 600 V, V GE = 0 V, Tj = 150 C IGES - 20 500 nA Gate-emitter leakage current V GE = 25 V, VCE = 0 V - - 100 Semiconductor Group 2 Apr-07-1998 SGD04N60 Preliminary data Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit AC Characteristics Transconductance V CE = 20 V, IC = 4 A gfs S 0.8 3.2 pF 270 340 Input capacitance V CE = 25 V, V GE = 0 V, f = 1 MHz Ciss Output capacitance V CE = 25 V, V GE = 0 V, f = 1 MHz Coss Crss 30 40 Reverse transfer capacitance V CE = 25 V, V GE = 0 V, f = 1 MHz - 18 23 Semiconductor Group 3 Apr-07-1998 SGD04N60 Preliminary data Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 150 C Values typ. max. Unit Turn-on delay time V CC = 400 V, V GE = 15 V, IC = 4 A RGon = 67 td(on) ns tr 20 30 Rise time V CC = 400 V, V GE = 15 V, IC = 4 A RGon = 67 td(off) 20 30 Turn-off delay time V CC = 400 V, V GE = 15 V, IC = 4 A RGoff = 67 tf 260 390 Fall time V CC = 400 V, V GE = 15 V, IC = 4 A RGoff = 67 E on 100 150 mJ Total turn-on loss energy * V CC = 400 V, V GE = 15 V, IC = 4 A RGon = 67 , Tj = 150 C E off 0.2 0.26 Total turn-off loss energy V CC = 400 V, V GE = 15 V, IC = 4 A RGoff = 67 , Tj = 150 C QG(on) 0.1 0.13 nC Total Gate Charge V CC = 480 V, V GE = 15 V, IC = 4 A - 24 36 * includes the reverse recovery losses caused by the FWD of the BUP410D Semiconductor Group 4 Apr-07-1998 SGD04N60 Preliminary data Package Outlines Dimensions in mm Weight: Semiconductor Group 5 Apr-07-1998 |
Price & Availability of SGD04N60
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |